MARIA C. TAMARGO                                                                   February, 2000

List of Publications

 

1. Use of Sapphire Liners to Eliminate Edge Growth in LPE (Al,Ga)As. M. C. Tamargo, C. L. Reynolds, Jr., J. Cryst. Growth 55, 325 (1981).

 

2. Triplet Exciplex Formation in the External Heavy Atom Effect. M. C. Tamargo, D. O. Cowan, J. Amer. Chem. Soc. 104, 1107 (1982).

 

3. Analysis of the Short-Time Liquid Phase Epitaxial Growth of AlxGa1-xAs. C. L. Reynolds, Jr., M. C. Tamargo, P. J. Anthony and J. L. Zilko, J. Cryst. Growth 57, 109 (1982).

 

4. Influence of Cooling Rate and Melt Configuration on Rake Lines in the Active Layer of AlxGa1-xAs DH Lasers, M. C. Tamargo, C. L. Reynolds, Jr., J. Cryst. Growth 57, 349 (1982).

 

5. Influence of Cooling Rate on the Short Time LPE Growth of the Active Layer in (Al,Ga)As DH Lasers, C. L. Reynolds, Jr., M. C. Tamargo, C. A. Gaw, J. Cryst. Growth 59, 525 (1982).

 

6. Liquid Phase Epitaxial Growth of (Al,Ga)As Double Heterostructure Laser Material in a Sapphire Boat. C. L. Reynolds, Jr., M. C. Tamargo, J. Appl. Phys. 53, 9217 (1982).

 

7. Spatial Variation of Bandgap Energy in InxGa1-xAs. A. F. S. Penna, J. Shah, T. Y. Chang, R. E. Nahory, M. Tamargo, M. S. Burroughs, H. M. Cox, Solid State Comm. 51, 425 (1984).

 

8. A Study of the Growth of High Purity InGaAs by Conventional LPE. T. C. Penna, M. C. Tamargo, W. L. Swartzwelder, J. Cryst. Growth 67, 27 (1984).

 

9. Photoluminescence of (Al,Ga)As Double Heterostructure Laser Material Containing a Buffer Layer. C. L. Reynolds, Jr., V. Swaminathan, M. C. Tamargo, Mat. Letters 2, 512 (1984).

 

10. Thermal Effects on LPE Layer Thickness. M. C. Tamargo, C. L. Reynolds, Jr., R. I. Kunkel, J. Cryst. Growth 71, 421 (1985).

 

11. Growth of a Novel InAs-GaAs Strained Layer Superlattice on InP. M. C. Tamargo, R. Hull, L. H. Greene, J. R. Hayes, A. Y. Cho, Appl. Phys. Letters 46, 569 (1985).

 

12. Growth and Characterization of an InAs-GaAs Superlattice Alloy. M. C. Tamargo, R. E. Nahory, P. Voisin, M. Voos, R. Hull, A. Y. Cho, J. Vac. Sci. Technol. B4, 539 (1986).

 

13. Luminescence Investigations of Highly Strained-Layer InAs-GaAs Superlattices. P. Voisin, M. Voos, J. Y. Marzin, M. C. Tamargo, R. E. Nahory, A. Y. Cho, Appl. Phys. Lett. 48, 1476 (1986).

 

14. Optical Spectroscopy of Ultra Small Structures Etched from Quantum Wells. K. Kash, A. Scherer, J. M. Worlock, H. G. Craighead, M. C. Tamargo, Appl. Phys. Letters 49, 1043 (1986).

 

15. X-Point Excitons in AlAs/GaAs Superlattices. E. Finkman, M. D. Sturge, M. C. Tamargo, Appl. Phys. Letters 49, 1299 (1986).

 

16. Optical Properties of Thin Layer AlAs/GaAs Superlattices. M. C. Tamargo, R. E. Nahory, M. H. Meynadier, M. D. Sturge, E. Finkman, D. M. Hwang, J. Ihm, J. Cryst. Growth 81, 109 (1987).

 

17. Disordering of AlAs-GaAs Superlattices by Si and S Implantation at Different Implant Temperatures. E. A. Dobisz, B. Tell, H. G. Craighead, M. C. Tamargo, J. Appl. Phys. 60, 4150 (1987).

 

18. New Quantum Interference Effects in GaAs/AlAs Resonant Tunneling Structures. N. Tabatabaie, M. C. Tamargo, Inst. Phys. Conf. Series 95, (1987).

 

19. Molecular Beam Epitaxy of GaAs/AlGaAs Superlattice Heterostructures on Non-Planar Substrates. E. Kapon, M. C. Tamargo, D. M. Hwang, Appl. Phys. Letters 50, 347 (1987).

 

20. High-Order Resonant Raman Scattering by Combinations and Overtones of Interface Phonons in GaAs-AlAs Short-Period Superlattices. M. H. Meynadier, E. Finkman, M. D. Sturge, J. M. Worlock, M. C. Tamargo, Phys. Rev. B 35, 2517 (1987).

 

21. Growth of ZnSe on GaAs Epitaxial Layers in a Dual Chamber Molecular Beam Epitaxy System. M. C. Tamargo, J. L. de Miguel, R. E. Nahory, B. J. Skromme, SPIE 796, 115 (1987).

 

22. Structural Characterization of GaAs/ZnSe Interfaces. M. C. Tamargo, J. L. de Miguel, D. M. Hwang, H. H. Farrell, J. Vac. Sci. Tech. B6, 784 (1988).

 

23. InAs Strained Layer Quantum Wells with Bandgaps in the 1.2-1.6mm Wavelength Range. J. L. de Miguel, M. C. Tamargo, M. H. Meynadier, R. E. Nahory, D. M. Hwang, Appl. Phys. Letters 52, 892 (1988).

 

24. Molecular Beam Epitaxial Growth and Characterization of Pseudomorphic InAs/In0.52Al0.48As Quantum Wells. J. L. de Miguel, M. H. Meynadier, M. C. Tamargo, R. E. Nahory, D. M. Hwang, J. Vac. Sci. Tech. B6, 617 (1988).

 

25. Optical Investigations of the Band Structure of Strained InAs/InAlAs Quantum Wells. M. H. Meynadier, J. L. de Miguel, M. C. Tamargo, R. E. Nahory, Appl. Phys. Letters 52, 302 (1988).

 

26. MBE and ALE Growth Mechanisms on II-VI(100) Surfaces. H. H. Farrell, M. C. Tamargo, J. L. de Miguel, J. Vac. Sci Tech. B6, 767 (1988).

 

27. TEM Investigations of Epitaxial Growth of Semiconductor Superlattices on Structured Substrates. D. M. Hwang, E. Kapon, M. C. Tamargo, R. Bhat, Mat. Res. Soc. Symp. Proc. 77, 773 (1987).

 

28. Patterned GaAs/AlGaAs Superlattice Heterostructures by Epitaxial Growth on Nonplanar GaAs Substrates. E. Kapon, D. M. Hwang, R. Bhat, M. C. Tamargo, Superlattices and Microstructures 4, 297 (1987).

 

29. Optical Properties and Band Structure of Short Period GaAs/AlAs Superlattices. E. Finkman, M. D. Sturge, M. H. Meynadier, R. E. Nahory, M. C. Tamargo, D. M. Hwang, C. C. Chang, J. Luminescence 39, 57 (1987).

 

30. Ultra-High Vacuum Processing: MBE. J. P. Harbison, P. F. Liao, D. M. Hwang, E. Kapon, M. C. Tamargo, G. Derkits, Jr., J. Levkoff, Proceedings of the NATO Conference on Emerging Technologies for In-Situ Processing (1987).

 

31. Photoconductivity and Photoreflectance Studies of Quantum Wells and Superlattices. M. H. Meynadier, R. E. Nahory, M. C. Tamargo, Sol. State Commun. 63, 463 (1987).

 

32. Aluminum Ion Implantation Enhanced Intermixing of GaAs-AlGaAs Quantum Well Structures. K. Kash, B. Tell, P. Grabbe, E. A. Dobisz, H. G. Craighead, M. C. Tamargo, J. Appl. Phys. 63, 190 (1988).

 

33. Raman Scattering Measurements of Decreased Barrier Heights in GaAs Following Surface Chemical Passivation. L. A. Farrow, C. J. Sandroff, M. C. Tamargo, Appl. Phys. Lett. 51, 1931 (1987).

 

34. ZnSe/III-V Heterostructures Grown in a Multichamber MBE System, M. C. Tamargo, J. L. de Miguel, D. M. Hwang, B. J. Skromme, M. H. Meynadier, R. E. Nahory and H. H. Farrell, Mat. Res. Soc. Symp. Proc. 102, 125 (1988).

 

35. Growth of II-VI/III-V Mixed Heterostructures, M. C. Tamargo, J. L. de Miguel, F. S. Turco, B. J. Skromme, D. M. Hwang, R. E. Nahory and H. H. Farrell, in Growth and Optical Properties of Wide-Gap II-VI Low Dimensional Semiconductors, Edited by T. C. McGill, C. M. Sotomayor-Torres and W. Gebhardt, (Plenum Publishing Corporation, 1989) p. 239.

 

36. Planar Doping with Gallium of Molecular Beam Epitaxial ZnSe, J. L. de Miguel, S. M. Shibli, M. C. Tamargo, B. J. Skromme, Appl. Phys. Lett. 53, 2065 (1988).

 

37. Planar Doping with Gallium of MBE Grown ZnSe Layers, M. C. Tamargo, S. M. Shibli, J. L. de Miguel, B. J. Skromme, C. L. Schwartz and S. A. Schwarz, Inst. Phys. Conf. Ser. 96, 41 (1989).

 

38. Characterization of Heteroepitaxial ZnSe grown by MBE on GaAs, AlAs and InGaAs, B. J. Skromme, M. C. Tamargo, F. S. Turco, S. M. Shibli, W. A. Bonner and R. E. Nahory, Inst. Phys. Conf. Ser. 96, 205 (1989).

 

39. Regrowth on MBE Epitaxial Layers by Transferring in Ultra-High Vacuum Between Growth Chambers, J. L. de Miguel, M. H. Meynadier, M. C. Tamargo, J. Vac. Sci. Technol. B7, 576R (1989).

 

40. RHEED Electron Stimulated Desorption from ZnSe (100). H. H. Farrell, J. L. de Miguel and M. C. Tamargo. J. Appl. Phys. 65, 4084 (1989).

 

41. Photoluminescence Characterization of Heteroepitaxial ZnSe/GaAs and ZnSe/AlAs grown by MBE, B. J. Skromme, M. C. Tamargo, J. L. de Miguel, R. E. Nahory, Mat. Res. Soc. Symp. Proc. 102, 577 (1988).

 

42. Reduction of Defects and Inhomogeneous Strain in Heteroepitaxial ZnSe, B. J. Skromme, M. C. Tamargo, J. L. de Miguel, R. E. Nahory, Appl. Phys. Lett. 53, 2217 (1988).

 

43. Photoluminescence Characterization of ZnSe Doped with Ga by Bulk and Planar Doping Techniques in Molecular Beam Epitaxy, B. J. Skromme, S. M. Shibli, J. L. de Miguel and M. C. Tamargo. J. Appl. Phys. 65, 3999 (1989).

 

44. Characterization of Heteroepitaxial ZnSe Grown by MBE on GaAs, AlAs and InGaAs, B. J. Skromme, M. C. Tamargo, F. S. Turco, S. M. Shibli, W. A. Bonner, R. E. Nahory. Inst. Phys. Conf. Series 96, 205 (1988).

 

45. Effects of Lattice Mismatch on the Photoluminescence Properties of Heteroepitaxial ZnSe on GaAs, InGaAs and AlAs. B. J. Skromme, M. C. Tamargo, F. S. Turco, S. M. Shibli, R. E. Nahory and W. A Bonner. Proc. Fall Meeting of the Electrochemical Society (1988).

 

46. Latteral Patterning of Semiconductor Superlattice Heterostructures by Epitaxial Growth on Nonplanar Substrates, E. Kapon, C. P. Yun, D. M. Hwang, M. C. Tamargo, J. P. Harbison, R. Bhat. SPIE  944, 80 (1988).

 

47. TEM Studies of GaAs/AlGaAs Heterostructures Grown on Patterned Substrates, D. M. Hwang, E. Kapon, M. C. Tamargo, J. P. Harbison, R. Bhat, L. Nazar, Mat. Res. Soc. Symp. 102, 209 (1988).

 

48. Etching and Cathodoluminescence Studies of Zinc Selenide, E. M. Clausen, Jr., H. G. Craighead, M. C. Tamargo, J. L. de Miguel, and L. M. Schiavone, Appl. Phys. Lett. 53, 690 (1988).

 

49. Reactive Ion Etching of Epitaxial Zinc Selenide Thin Films, E. M. Clausen, Jr., H. G. Craighead, L. M. Schiavone, M. C. Tamargo, J. L. de Miguel, J. Vac. Sci. Technol B6, 1889 (1988).

 

50. Indirect-Direct Anticrossing in GaAs-AlAs Superlattices Induced by an Electric Field: Evidence for GAMMA-X Mixing, M. H. Meynadier, R. E. Nahory, J. M. Worlock, M. C. Tamargo, and J. L. de Miguel, Phys. Rev. Lett. 60, 1338 (1988).

 

51. Multiple Chamber Molecular Beam Epitaxy Growth System: Growth of GaAs/ZnSe Heterostructures, M. C. Tamargo, J. L. de Miguel, F. S. Turco, B. J. Skromme, M.-H. Meynadier, R. E. Nahory, D. M. Hwang, and H. H. Farrell, SPIE 1037, 73 (1989).

 

52. Electrical Characterization of Gallium Planar Doped ZnSe Grown by Molecular Beam Epitaxy, S. M. Shibli, M. C. Tamargo, J. L. de Miguel, B. J. Skromme, R. E. Nahory, and H. H. Farrell, J. Appl. Phys. 66, 4295 (1989).

 

53. Arsenic Doped ZnSe Grown by MBE, S. M. Shibli, M. C. Tamargo, B. J. Skromme, S. A. Schwarz, C. L. Schwartz, R. E. Nahory, and R. J. Martin, J. Vac. Sci. Technol. B8, 187 (1990).

 

54. Growth Studies of Molecular Beam Epitaxial ZnSe Using RHEED Oscillations, F. S. Turco and M. C. Tamargo, J. Appl. Phys. 66, 1695 (1989).

 

55. Study of MBE ZnSe Growth Using RHEED Oscillations, F. S. Turco, and M. C. Tamargo, Mat. Res. Soc. Symp. Proc. 145, 435 (1989).

 

56. Growth of InGaAs/InAlAs Quantum Wells on InP Patterned Substrates, F. S. Turco, M. C. Tamargo, D. M. Hwang, R. E. Nahory, J. Werner, K. Kash, and E. Kapon, Appl. Phys. Letters 56, 72 (1990).

 

57. High Quality Molecular Beam Epitaxial Regrowth of (Al,Ga)As on Se-Modified GaAs(100) Surfaces, F. S. Turco, C. J. Sandroff, T. S. Ravi, and M. C. Tamargo, J. Appl. Phys. 66, 1695 (1989).

 

58. Cathodoluminescence Imaging of Patterned Quantum Well Heterostructures Grown on Nonplanar Substrates by Molecular Beam Epitaxy, E. M. Clausen, Jr., E. Kapon, M. C. Tamargo, D. M. Hwang, Appl. Phys. Letters 56, 776 (1990).

 

59. The structure of the ZnSe(100)c(2x2) Surface, H. H. Farrell, M. C. Tamargo, S. M. Shibli, and Y. Chang, J. Vac. Sci. Technol. B8, 884 (1990).

 

60. Microstructural Characteristics of Phase Separated and Ordered Epitaxial Layers of III-V Semiconductors, T. L. McDevitt, S. Mahajan, D. E. Laughlin, F. S. Turco, M. C. Tamargo, M. A. Shahid, W. A. Bonner and V. G. Keramidas, Proceedings of the International Conference on the Science and Technology of Defects Control in Semiconductors, Yokohama, Japan, September, 1989.

 

61. Vertical Transport, Tunneling Cyclotron Resonance, and Saturated Mini-Band Transport in Semiconductor Superlattices, S. J. Allen, Jr., R. Bhat, G. Brozak, E. A. DeAndrada, E. Silva, F. DeRosa, L. T. Florez, P. Grabbe, J. P. Harbison, D. M. Hwang, M. Koza, P. F. Micelli, S. A. Schwarz, L. J. Sham, and M. C. Tamargo, NATO ASI Series (Jan. 1990) Plenum Publishing.

 

62. Rapid Thermal Anneling and Ion Implantation of Heteroepitaxial ZnSe/GaAs B. J. Skromme, N. G. Stoffel, A. S. Gozdz, M. C. Tamargo, and S. M. Shibli, Mat. Res. Soc. Symp. Proc. 144, 391 (1989).

 

63. Thermal and Chemical Stability of Se Passivated GaAs Surface, F. S. Turco, C. J. Sandroff, M. S. Hedge and M. C. Tamargo, J. Vac. Sci Technol., B8, 856 (1990).

 

64. Molecular Beam Epitaxial Growth of GaAs/(Al,Ga)As Quantum Wells on Submicron-Period Corrugated Substrates, F. S. Turco, S. Simhony, K. Kash, D. M. Hwang, T. S. Ravi, E. Kapon and M. C. Tamargo, J. Crystal Growth 104, 766 (1990).

 

65. Passivation of ZnSe(100) Surfaces via As Capping, H. H. Farrell, M. C. Tamargo, S. M. Shibli, Y. Chang, and J. McNeill, J. Vac. Sci. Technol. B9, 264 (1991).

 

66. Surface Stoichiometry Effects on ZnSe/GaAs Heteroepitaxy, M. C. Tamargo, R. E. Nahory, B. J. Skromme, S. M. Shibli, A. L. Weaver, R. J. Martin and H. H. Farrell, J. Crystal Growth, 111, 741 (1991).

 

67. Optimal GaAs(100) Substrate Terminations for Heteroepitaxy, H. H. Farrell, M. C. Tamargo and J. L. deMiguel, Appl. Phys. Letters 58, 355 (1991).

 

68. Electroreflectance determination of the band profile of a ZnSe/n+ GaAs Heterojunction, L. Kassel, J. W. Garland, P. M. Raccah, M. C. Tamargo and H. H. Farrell, Semiconductor Sci. and Technol. 6, A152 (1991).

 

69. Contactless Electrical Characterization and Realization of p-Type ZnSe, H. H. Farrell, M. C. Tamargo, T. J. Gmitter, A. L. Weaver and D. E. Aspnes, J. Appl. Phys., 70, 1033 (1991).

 

70. "Designer" Interfaces in II-VI/III-V Polar Heteroepitaxy, H. H. Farrell, M. C. Tamargo, J. L. de Miguel, F. S. Turco, D. M. Hwang, and R. E. Nahory, J. Appl. Phys. 69, 7021 (1991).

 

71. MBE Growth of the (Zn,Cd)(Se,Te) System for Wide Bandgap Heterostructure Lasers, M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory, R. J. Martin, A. L. Weaver and H. L. Gilchrist, Semiconductor Sci. Technol. 6, A8 (1991).

 

72. Zn1-yCdySe1-xTex Quaternary Wide Bandgap Alloys: Molecular Beam Epitaxy Growth and Characterization, M. J. S. P.Brasil, M. C. Tamargo, R. E. Nahory, H. L. Gilchrist and R. J. Martin, Appl. Phys. Letters, 59, 1206 (1991).

 

73. ZnSe/ZnCdSe Quantum Well Light Emitting Diodes, M. C. Tamargo, M.J.S.P. Brasil, R. E. Nahory, R. J. Martin, H. H. Farrell, D. E. Aspnes, A. L. Weaver, Y. Zhang, B. J. Skromme, J. Vac. Sci. Technol. B10, 692 (1992).

 

74. Optically Monitoring and Controlling Epitaxial Growth, D. E. Aspnes, R. Bhat, C. Caneau, E. Colas, L. T. Florez, J. P. Harbison, I. Kamiya, V. G. Keramidas, M. A. Koza, M. A. A. Pudensi, W. E. Quinn, S. A. Schwarz, M. Tamargo and H. Tanaka, J. Crystal Growth 120,  71 (1992).

 

75. Growth over Non-Planar Substrates by Organometallic Molecular Beam Epitaxy, M. C. Tamargo, W. E. Quinn, D. M. Hwang, C. Y. Chen, E. Kapon, L. M. Schiavone, M. J. S. P. Brasil and R. E. Nahory, J. Vac. Sci. Technol. B10, 982 (1992).

 

76.  Organometallic-MBE Growth and Characterization of InAlAs on InP, W. E. Quinn, M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory and H. H. Farrell, J. Vac. Sci. Technol. B10, 978 (1992).

 

77. InxAl1-xAs/InP: Organometallic Molecular Beam Epitaxial Growth and Optical Properties, M.J.S.P. Brasil, R.E. Nahory, W.E. Quinn, M.C. Tamargo, R. Bhat and M.A. Koza, Proc. 18th Int'l Conf. on GaAs and Related Compounds, September, 1991, Seattle.

 

78. Automated Control of III-V Semiconductor Composition and Structure by Spectroellipsometry, W. E. Quinn, D. E. Aspnes, M. J. S. P. Brasil, M. A. A. Pudensi, S. A. Schwarz, M. C. Tamargo, S. Gregory and R. E. Nahory, J. Vac. Sci. Technol. B10, 759 (1992).

 

79. Growth of AlxGa1-xAs Parabolic Quantum Wells by Real-Time Feedback Control of Composition, D. E. Aspnes, W. E. Quinn, M. C. Tamargo, M. A. A. Pudensi, M. J. S. P. Brasil, R. E. Nahory and S. Gregory, Appl. Phys. Letters 60, 1244 (1992).

 

80. Optical Transitions and Chemistry at the In0.52Al0.48As/InP Interface, M.J.S.P. Brasil, R. E. Nahory, W. E. Quinn, M. C. Tamargo and H. H. Farrell, Appl. Phys. Letters, 60, 1981 (1992).

 

81. Interference in Reflected Second Harmonic Generation from Thin Nonlinear Films, M. S. Yeganeh, J. Qi, J. Culver, A. G. Yodh, M. C. Tamargo, Phys. Rev B. 46, 1603 (1992).

 

82. Fabrication and Characterization of ZnSe/GaAs Heterostructure Bipolar Transistors Grown by Molecular Beam Epitaxy, A. Glaeser, J. Merz, R. E. Nahory and M. C. Tamargo, Appl. Phys. Letters, 60, 1345 (1992).

 

83. Closed-Loop Growth of Semiconductor Materials and Structures by Spectroellipsometry, D. E. Aspnes, W. E. Quinn, M. C. Tamargo, S. Gregory, S. A. Schwarz, M. A. A. Pudensi, M.J.S.P. Brasil and R. E. Nahory, J. Vac. Sci. Technol. A10, 1840 (1992).

 

84. Arsenic Phosphorus Exchange During the Formation of InAlAs/InP Interfaces, M.J.S.P. Brasil, R. E. Nahory, M. C. Tamargo, W. E. Quinn, D. E. Aspnes, H. H. Farrell, D. M. Hwang and B. Philips, Proceedings of the Fourth Intn'l Conference on InP and Related Materials, Newport, RI, 1992.

 

85. Formation of the Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy, M.C. Tamargo, M.J.S.P. Brasil, R. E. Nahory, D. E. Aspnes, B. Philips, D. M. Hwang, S. A. Schwarz and W. E. Quinn, Mat. Res. Soc. Symp. Proc. 263, 267 (1992).

 

 

86. Real-time Optical Control of Epitaxial III-V Semiconductor Composition and Structure, W. E. Quinn, D. E. Aspnes, M.J.S.P. Brasil, M.A.A. Pudensi, S. A. Schwarz, M. C. Tamargo, S. Gregory and R. E. Nahory, SPIE Proceedings 1676, 12 (1992).

 

87. Interface Quantum Well States Observed by Three-Wave Mixing in ZnSe/GaAs Heterostructures, M. S. Yeganeh, J. Qi, A. G. Yodh and M. C. Tamargo, Phys. Rev. Letters. 68, 3761 (1992).

 

88. A Photoexcited Three-Component Electron-Hole Plasma in Type II GaAs/AlAs Quantum Wells, J. L. Mackay, M. D. Sturge, M.-H. Meynadier, M. C. Tamargo and J. L. de Miguel, J. Lumin., (1993).

 

89. Influence of Heterointerface Atomic Structure and Defects on Second-Harmonic-Generation, M. S. Yeganeh, J. Qi, A. G. Yodh and M. C. Tamargo, Phys. Rev. Letters 69, 3579 (1992).

 

90. "Zn1-yCdySe1-xTex Quaternary II-VI Wide Bandgap Alloys and Heterostructures," R. E. Nahory, M. J. S. P. Brasil and M. C. Tamargo in Semiconductor Interfaces and Microstructures, ed. Z. C. Feng, World Scientific (1992).

 

91. Investigation of Roughness at InP/InAs Interfaces, M.J.S.P. Brasil, R. E. Nahory, M. C. Tamargo and S. Schwarz, Mat. Res. Soc. Symp. Proc. 280, 255 (1993).

 

92. Roughness at the Interface of Thin InP/InAs Quantum Wells, M. J. S. P. Brasil, R. E. Nahory, M. C. Tamargo and S. A. Schwarz, Appl. Phys. Letters 63, 2688 (1993).

 

93. Properties of the As-related Shallow Acceptor Level in Heteroepitaxial ZnSe Grown by Molecular Beam Epitaxy, Y. Zhang, B. J. Skromme, S. M. Shibli and M. C. Tamargo, Phys. Rev. B. 48 (1993) 10,885.

 

94. Excimer Laser Procesing and Activation of N in ZnSe, N. Padmapani, G. F. Neumark, C. C. Chang, N. Taskar and M. C. Tamargo, J. Appl. Phys.(1993).

 

95. Three-wave Mixing Spectroscopy of ZnSe/GaAs(001) Heterointerfaces, M. S. Yeganeh, J. Qi, J. P. Culver, A. G. Yodh and M. C. Tamargo, Phys. Rev. B 49, 11196, (1994).

 

96. Acceptor State Instabilities in ZnSe Under Hydrostatic Pressure, D. J. Strachan, M. Ming Li, M. Tamargo and B. A. Weinstein, J. Crystal Growth. 138, 318 (1994).

 

97. Systematic Investigation of Shallow Acceptor Levels in ZnSe, Y Zhang, W. Liu, B. J. Skromme, H. Cheng, S. M. Shibli, M. C. Tamargo, J. Crystal Growth 138, 310, March/April (1994).

 

98. Luminescence of Deep Phosphorus and Arsenic Impurities in ZnSe at High Pressure, M. M. Li, D. J. Strachan, T. M. Ritter, M. Tamargo and B. A. Weinstein, Phys. Rev. B 50, 4385 (1994).

 

99. As Capture and the Growth of Ultrathin InAs Layers on InP, D. E. Aspnes, M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory and S. A. Schwarz, Appl. Phys. Letters, 64, 3279 (1994).

100. As Capture and the Growth of Ultrathin InAs Layers on InP, D. E. Aspnes, M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory and S. A. Scwarz, J. Vac. Sci. Tecnol. A 12, 1180 (1994).

 

101. Molecular Beam Epitaxial Growth of High Quality Zn1-xCdxSe on InP Substrates, N. Dai, A. Cavus, R. Dzakpasu, M. C. Tamargo, F. Semendy, N. Bambha, D. M. Hwang and C.Y. Chen, Appl. Phys Letters, 66, 2742 (1995).

 

102. Growth of Wide Bandgap II-VI Alloys on InP Substrates by Molecular Beam Epitaxy, M. C. Tamargo, N. Dai, A. Cavus, R. Dzakpasu, W. Krystek, F. H. Pollak, F. Semendy, N. Bambha, P. Boyd, D. M. Hwang, C. Y. Chen, SPIE Proceedings 2346, (1995).

 

103. Molecular Beam Epitaxial Growth of Lattice-Matched Wide Bandgap II-VI Alloys and Heterostructures on InP Substrates, M. C. Tamargo, A. Cavus, L. Zeng, N. Dai, N. Bambha, A. Gray, F. Semendy, W. Krystek and F. H. Pollak, in Semiconductor Heteroepitaxy: Growth Characterization and Device Applications, B. Gil and R.L. Aulombard, eds. (World Scientific, Singapore, 1995)

 

104. Emergence of Deep Levels in n-Type ZnSe Under Hydrostatic Pressure, T. M. Ritter, B. A. Weinstein, R. Park, M. Tamargo, Phys. Rev. Letters 76, 964 (1996).

 

105. MBE Growth of Lattice-Matched ZnCdMgSe Quaternaries and ZnCdMgSe/ZnCdSe Quantum Wells on InP Substrates, M. C. Tamargo, A. Cavus, L. Zeng, N. Dai, N. Bambha, A. Gray, F. Semendy, W. Krystek and F. H. Pollak, J. Elect. Mater. 25, 259 (1996).

 

106. D-X Centers in II-VI Semiconductors, T. Thio, D. J. Chadi, R. A. Linke, P. Becla, M. C. Tamargo, J. Elect. Mater. 25, 229 (1996).

 

107. ZnCdMgSe/ZnCdSe Quantum Wells on InP Substrates for Visible Emitters", A. Cavus, L. Zeng, M. C. Tamargo, N. Bambha, F. Semendy and A. Gray, App. Phys. Letters, 68, 3446 (1996).

 

108. Study of Temperature-Dependent Exciton Dynamics in a Single Quantum Well wih Self-Assembled Islands, M. V. Marquezini, M. J. S. P. Brazil, J. A. Brum, P. Poole, S. Charbonneau and M. C. Tamargo, Surface Science 361/362, 810 (1996).

 

109. Temperature-Dependent Exciton Dynamics in a Single Quantum Well wih Self-Assembled Islands, M. V. Marquezini, M. J. S. P. Brazil, J. A. Brum, P. Poole, S. Charbonneau and M. C. Tamargo, Phys. Rev. B. 53, 16524 (1996).

 

110. Temperature Dependence of the Direct Gaps of ZnSe and Zn0.56Cd0.44Se, L. Malikova, Wojciech Krystek, F. H. Pollak, N. Dai, A. Cavus and M. C. Tamargo, Phys. Rev. B, 54, 1819 (1996).

 

111. Structural and Electronic Properties of the Zn0.5Cd0.5Se(100) Surface, D. Y. W. Yu, A. Kahn, A. Cavus and M. C. Tamargo, Surface Science 373, 350 (1997).

 

112. Observation of carrier Confinement Near ZnCdSe/InP Heterointerface, K. Shum, L. Zeng, N. Dai, M. C. Tamargo, Appl. Phys. Letters 69, 4200 (1997).

 

113. Molecular Beam Epitaxial Growth of Lattice-Matched ZnCdMgSe Quaternaries on InP Substrates, L. Zeng, A. Cavus, B. X. Yang, M. C. Tamargo, J. Crystal Growth 175/176, 541 (1997).

 

114. Optimized Growth of Lattice Matched ZnCdSe Epilayers on InP Substrates, A. Cavus, L. Zeng, B. X. Yang, N. Dai, M. C. Tamargo, N. Bambha and F. Semendy, J. Crystal Growth, 175/176, 558 (1997).

 

115. Photo-pumped ZnCdSe/ZnCdMgSe Blue-Green Quantum Wells lasers Lasers Grown on InP Substrates, Y. Guo, G. Aizin, Y. C. Chen, L. Zeng, A. Cavus, M. C. Tamargo, Appl. Phys. Letters 70, 1351, (1997).

 

116. Improvement in Quality of Epitaxial ZnCdSe Layers Grown on (001) InP Substrates by Using an InP Buffer Layer, E. Snoeks, S. Herko, L. Zhao, B. Yang, A. Cavus, L. Zeng and M. C. Tamargo,   App. Phys. Lett.70, 2259 (1997).

 

117. Structural Quality of Pseudomorphic ZnCdSe Layers Grown on an InGaAs or InP Buffer Layer on (001) InP Substrates, E. Snoeks, L. Zhao, A. Cavus, L. Zeng, B. Yang and M. C. Tamargo, J. Crystal Growth 179, 83 (1997). 

 

118. Spectral Ellipsometry Investigation of ZnCdSe Lattice-Matched to InP, T. Holden, P. Ram, F. H. Pollak, J. L. Freeouf, B. X. Yang and M. C. Tamargo, Phys. Rev. B.56, 4037 (1997).

 

119. Selective Area Epitaxy of CdTe, Y. Y. Luo, A. Cavus and M. C. Tamargo,  J. Electronic Materials 26, 510 (1997).

 

120. Room Temperature Differencial Negative Resistance in an Al/ZnCdSe/n+-InP Device, K. Shum, J. Zhou, W. Zhang, L. Zeng and M. C. Tamargo,  Appl. Phys. Lett.71, 815 (1997).

 

121. Determination of Defect Density in ZnCdMgSe Layers Grown on InP Using a Chemical Etch, L. Zeng, B. X. Yang, B. Shewareged, M. C. Tamargo, J. Z. Wan, F. H. Pollak, E. Snoeks and L. Zhao, J. Appl. Phys. 82, 3306 (1997).

 

122. A Concept for Nonvolatile Memories, K. Shum, J. Zhou, W. Zhang, L. Zeng and M. C. Tamargo, Appl. Phys. Lett. 71, 2487 (1997).

 

123. Selective Area Epitaxy of CdTe Arrays, Y. Y. Luo, A. Cavus, M. C. Tamargo, J. Wan and F. H. Pollak, J. Vac. Sci. Technol. B 16, 1312 (1998).

 

124. Quality Improvements of ZnCdMgSe Layers Grown on InP Substrates by Incorporating a Thin ZnCdSe Layer, L. Zeng, B. X. Yang, M. C. Tamargo, E. Snoeks and L. Zhao, Appl. Phys. Lett., 72, 1317 (1998).

 

125. N-Type Doping of Lattice-Matched ZnCdSe and ZnCdMgSe Epilayers on InP Using ZnCl2, W. Lin, A. Cavus, L. Zeng and M. C. Tamargo, J. Appl. Phys., 84, 1472 (1998).

 

126. Red-Green-Blue (R-G-B) Photopumped Lasing from ZnCdMgSe/ZnCdSe QW Laser Structures Grown on InP, L. Zeng, Y. Guo, B.X. Yang, A. Cavus, W. Lin, Y. Y. Luo, Y. C. Chen and M. C. Tamargo, Appl. Phys. Lett., 72, 3136 (1998).

 

127. Dynamics of Recombination Enhanced Defect Reaction in a ZnCdSe Single Quantum Well, M. Tang, K. Shum, L. Zeng, and M. C. Tamargo, Appl. Phys. Lett., 73, 1541 (1998).

 

128.  Defect Reduction of ZnxCdyMg1-x-ySe Based Structures Grown on InP by Using Zn Irradiation of the III-V Surface, L. Zeng, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, H. Xing, and G. S. Cargill, III, J. Vac. Sci. Technol. B17, 1255 (1999).

 

129. “New Materials for Wide Bandgap II-VI Visible Emitters” M. C. Tamargo, in Optoelectronic Materials and Their Applications (Including Solar Cells), eds. F. Leccabue, M. Sanchez and A. Escobosa, Edizione ETS, Pisa (1999).

 

130. High Crystalline Quality ZnBeSe Grown by Molecular Beam Epitaxy with Be-Zn Co-irradiation, S. P. Guo, Y. Luo, W. Lin, O. Maksimov, M. C. Tamargo, I. Kuskovsky, C. Tian, G. F. Neumark, J. Crystal Growth 208, 205 (2000).

 

131.  Molecular Beam Epitaxy Growth and Nitrogen Doping of ZnSeTe Alloys Grown on InP Substrates, W. Lin, B. X. Yang, S. P. Guo, A. Elmoumni, F. Fernandez, M. C. Tamargo, Appl. Phys. Letters 75, 2608 (1999).

 

132.  Asymetric Luminescence Line Shape and Exciton Energy Relaxation in ZnMgCdSe Epilayers, J. X. Shen, R. Pittini, Y. Oka, S. P. Guo and M. C. Tamargo, Appl. Phys. Letters 75, 3494 (1999).

 

 133. Study of Exciton Localization in ZnCdSe Quantum Wells, P. Diaz-Arencibia, L. M. Hernandez-Ramirez, M. C. Tamargo, O. de Melo and I. Hernandez-Calderon, in “Optoelectronic Materials and Their Applications (Including Solar Cells)”, eds. F. Leccabue, M. Sanchez and A. Escobosa, Edizioni ETS, Pisa (1999).

 

134.  Persistent Photoconductivity in Ga d-doped ZnSe, G. J. Hu, N. Dai, L. Y. Chen, M. C. Tamargo, Solid State Commun. (1999).

 

135.  Photoluminescence Properties of Intra-Well Exciton Migration in ZnCdSe Quantum Wells, P. Diaz-Arencibia, I. Hernandez-Calderon, L. M. Hernandez-Ramirez, M. C. Tamargo, Microelectronics Journal, accepted (2000).

 

136. In-Situ Device Processing Using Shadow Mask Selective Area Epitaxy and In-Situ Metallization, Y. Luo, L. Zeng, W. Lin, B. Yang, M. C. Tamargo, Y. M. Strzhemechny and S. A. Schwarz, J. Electronic Mat., accepted (2000).

 

137. Growth and Characterization of Hexagonal (Zn,Mg)(S,Se) Bulk Substrates, W. Lin, M. C. Tamargo, J. Steiner, H. Y. Wei, W. Sarney, L. Salamanca-Riba, B. J. Fitzpatrick, J. Crystal Growth, accepted (2000).

 

138. Wide Bandgap II-VI Materials for Red-Green-Blue Emitters, M. C. Tamargo, W. Lin, S. P. Guo, Y. Y. Luo, O. Maksimov, Proceedings of the Latin American Congress for Surface Science and Its Applications (CLACSA-9), accepted (2000). (Invited)

 

139. Growth and Characterization of patterned ZnCdSe Structures For Application in Integrated R-G-B II-VI Light Emitting Diodes, Y. Luo, A. Elmoumni, S. P. Guo, M. C. Tamargo, S. Kelly, H. Ghaemi, V. Asnin, M. Tomkiewicz, F. H. Pollak, Y. C. Chen, J. Vac. Sci. Technol. B, accepted (2000).

 

140.  Temperature Dependence of Exciton Localization in ZnCdSe Quantum Wells, P. Diaz-Arencibia, I. Hernandez-Calderon, L. M. Hernandez-Ramirez, M. C. Tamargo, J. Vac. Sci. Technol. B, accepted (2000).

 

141.  p-Type Doping of (Zn,Mg,Cd)Se Alloys Using and rf-Discharge Nitrogen Plasma, W. Lin, S. P. Guo, M. C. Tamargo, J. vac. Sci. Technol. B, accepted (2000).

 

142.  Full-Color Light Emitting Diodes from ZnCdMgSe/ZnCdSe Quantum Well Structures Grown on InP, M. C. Tamargo, W. Lin, S. P. Guo, Y. Luo, Y. Guo and Y. C. Chen, J. Crystal Growth, accepted (2000). (Invited)

 

143. Photoluminescence Characterization of MBE Grown ZnBeSe, I. Kuskovsky, C. Tian, G. F. Neumark, S. P. Guo, and M. C. Tamargo, J. Crystal Growth, accepted (2000).

 

144.  MBE Growth and Nitrogen Doping of Hexagonal ZnSe and ZnCdSe/ZnSe Quantum Well Structures on Hexagonal ZnMgSSe Bulk Substrates, W. Lin, M. C. Tamargo, H. Y. Wei, W. Sarney, L. Salamanca-Riba, B. J. Fitzpatrick, J. Vac. Sci. Technol. B, submitted.

 

145. Enhancement of p-type Doping of ZnSe Using a Modified (N + Te) d-doping Technique, W. Lin, S. P. Guo, M. C. Tamargo, I. Kuskovsky, C. Tian, G. F. Neumark, Appl. Phys. Letters, submitted.